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	Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers
	Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong
刊名	SCIENTIFIC REPORTS
	2016
卷号	6期号:[db:dc_citation_issue]
ISSN号	2045-2322
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3219882
专题	西安交通大学
推荐引用方式 GB/T 7714	Niu, Gang,Capellini, Giovanni,Schubert, Markus Andreas,et al. Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers[J]. SCIENTIFIC REPORTS,2016,6([db:dc_citation_issue]).
APA	Niu, Gang.,Capellini, Giovanni.,Schubert, Markus Andreas.,Niermann, Tore.,Zaumseil, Peter.,...&Schroeder, Thomas.(2016).Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.SCIENTIFIC REPORTS,6([db:dc_citation_issue]).
MLA	Niu, Gang,et al."Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers".SCIENTIFIC REPORTS 6.[db:dc_citation_issue](2016).

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