Terahertz-induced impact ionization effect in semiconductor heterojunctions

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	Terahertz-induced impact ionization effect in semiconductor heterojunctions
	Cao, JC
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
	2005
卷号	44 期号:10 页码:7364-7366
关键词	BALANCE-EQUATION APPROACH TRANSPORT SYSTEMS DRIVEN FIELD
ISSN号	0021-4922
通讯作者	Cao, JC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informay, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2011-12-02
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/31632]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Cao, JC. Terahertz-induced impact ionization effect in semiconductor heterojunctions[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,2005,44(10):7364-7366.
APA	Cao, JC.(2005).Terahertz-induced impact ionization effect in semiconductor heterojunctions.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,44(10),7364-7366.
MLA	Cao, JC."Terahertz-induced impact ionization effect in semiconductor heterojunctions".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44.10(2005):7364-7366.