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	In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit
	Zhao, Danna; Huang, Hui; Chen, Shunji; Li, Zhirui; Li, Shida; Wang, Mengyuan; Zhu, Huichao; Chen, Xiaoming
刊名	NANO LETTERS
	2019
卷号	19页码:3448-3456
关键词	GaN nanowire bridge parasitic deposition bypass current gas sensor
ISSN号	1530-6984
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3218599
专题	大连理工大学
作者单位	Dalian Univ Technol, Fac Elect Informat & Elect Engn, Sch Biomed Engineer, Key Lab Liaoning IC Technol, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, Danna,Huang, Hui,Chen, Shunji,et al. In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit[J]. NANO LETTERS,2019,19:3448-3456.
APA	Zhao, Danna.,Huang, Hui.,Chen, Shunji.,Li, Zhirui.,Li, Shida.,...&Chen, Xiaoming.(2019).In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit.NANO LETTERS,19,3448-3456.
MLA	Zhao, Danna,et al."In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit".NANO LETTERS 19(2019):3448-3456.

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