Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD

	Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD
	H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang
刊名	Journal of Alloys and Compounds
	2018
卷号	765 页码:245-248
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29327]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang. Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD[J]. Journal of Alloys and Compounds,2018,765:245-248.
APA	H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang.(2018).Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD.Journal of Alloys and Compounds,765,245-248.
MLA	H.R. Qi ; L.K. Yi ; J.L. Huang ; S.T. Liu ; F. Liang ; M. Zhou ; D.G. Zhao ; D.S. Jiang."Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD".Journal of Alloys and Compounds 765(2018):245-248.