Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer

	Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer
	Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2018
卷号	29 期号:11 页码:9321-9325
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29361]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du. Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(11):9321-9325.
APA	Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du.(2018).Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,29(11),9321-9325.
MLA	Gaoqiang Deng;Yuantao Zhang;Ye Yu;Long Yan;Pengchong Li;Xu Han;Liang Chen;Degang Zhao;Guotong Du."Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29.11(2018):9321-9325.