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	Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation
	Liu, Mingshan[1,2]; Han, Genquan[1,2]; Liu, Yan[2]; Zhang, Chunfu[1]; Wang, Hongjuan[2]; Li, Xiangdong[1]; Zhang, Jincheng[1]; Cheng, Buwen[3]; Hao, Yue[1]
会议日期	June 9, 2014 - June 12, 2014
会议地点	Honolulu, HI, United states
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/3203314
专题	重庆大学
推荐引用方式 GB/T 7714	Liu, Mingshan[1,2],Han, Genquan[1,2],Liu, Yan[2],et al. Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation[C]. 见:. Honolulu, HI, United states. June 9, 2014 - June 12, 2014.

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