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	Erratum to: Metal-insulator transition of Ge-Sb-Te superlattice: An electron counting model study ( IEEE Transactions on Nanotechnology (2018) 17:1 (140-146) DOI: 10.1109/TNANO.2017.2779579)
	Chen, Nian-Ke[1]; Li, Xian-Bin[1]; Wang, Xue-Peng[1]; Xie, Sheng-Yi[2]; Tian, Wei Quan[3]; Zhang, Shengbai[1,4]; Sun, Hong-Bo[1,5]
	2018
卷号	17页码:614-614
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3194571
专题	重庆大学
推荐引用方式 GB/T 7714	Chen, Nian-Ke[1],Li, Xian-Bin[1],Wang, Xue-Peng[1],et al. Erratum to: Metal-insulator transition of Ge-Sb-Te superlattice: An electron counting model study ( IEEE Transactions on Nanotechnology (2018) 17:1 (140-146) DOI: 10.1109/TNANO.2017.2779579)[J],2018,17:614-614.
APA	Chen, Nian-Ke[1].,Li, Xian-Bin[1].,Wang, Xue-Peng[1].,Xie, Sheng-Yi[2].,Tian, Wei Quan[3].,...&Sun, Hong-Bo[1,5].(2018).Erratum to: Metal-insulator transition of Ge-Sb-Te superlattice: An electron counting model study ( IEEE Transactions on Nanotechnology (2018) 17:1 (140-146) DOI: 10.1109/TNANO.2017.2779579).,17,614-614.
MLA	Chen, Nian-Ke[1],et al."Erratum to: Metal-insulator transition of Ge-Sb-Te superlattice: An electron counting model study ( IEEE Transactions on Nanotechnology (2018) 17:1 (140-146) DOI: 10.1109/TNANO.2017.2779579)".17(2018):614-614.

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