Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study | |
Chen, Nian-Ke[1]; Li, Xian-Bin[1]; Wang, Xue-Peng[1]; Xie, Sheng-Yi[2]; Tian, Wei Quan[3]; Zhang, Shengbai[1,4]; Sun, Hong-Bo[1,5] | |
2018 | |
卷号 | 17页码:140-146 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3183190 |
专题 | 重庆大学 |
推荐引用方式 GB/T 7714 | Chen, Nian-Ke[1],Li, Xian-Bin[1],Wang, Xue-Peng[1],et al. Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study[J],2018,17:140-146. |
APA | Chen, Nian-Ke[1].,Li, Xian-Bin[1].,Wang, Xue-Peng[1].,Xie, Sheng-Yi[2].,Tian, Wei Quan[3].,...&Sun, Hong-Bo[1,5].(2018).Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study.,17,140-146. |
MLA | Chen, Nian-Ke[1],et al."Metal-Insulator Transition of Ge-Sb-Te Superlattice: An Electron Counting Model Study".17(2018):140-146. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论