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	Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET
	Zeng, Zheng[1]; Li, Xiaoling[1]
	2018
卷号	33页码:8754-8763
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2975876
专题	重庆大学
推荐引用方式 GB/T 7714	Zeng, Zheng[1],Li, Xiaoling[1]. Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET[J],2018,33:8754-8763.
APA	Zeng, Zheng[1],&Li, Xiaoling[1].(2018).Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET.,33,8754-8763.
MLA	Zeng, Zheng[1],et al."Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET".33(2018):8754-8763.

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