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	He and H sequential implantation induced surface blistering and the exfoliation of Si covered with an oxide layer
	Wang Zhuo1; Gao YuJie1; Li MengKai1; Zhu Fei1; Zhang DaCheng1; Liu ChangLong2
刊名	中国物理C
	2013
卷号	第37卷页码:P70-75
关键词	SiO_2/Si wafer/He and H ion implantation/localized exfoliation/crack
ISSN号	0254-3052
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2930797
专题	天津大学
作者单位	1.School of Science, Tianjin University, Tianjin, 300072/2.School of Science, Tianjin University, Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology, Tianj
推荐引用方式 GB/T 7714	Wang Zhuo1,Gao YuJie1,Li MengKai1,et al. He and H sequential implantation induced surface blistering and the exfoliation of Si covered with an oxide layer[J]. 中国物理C,2013,第37卷:P70-75.
APA	Wang Zhuo1,Gao YuJie1,Li MengKai1,Zhu Fei1,Zhang DaCheng1,&Liu ChangLong2.(2013).He and H sequential implantation induced surface blistering and the exfoliation of Si covered with an oxide layer.中国物理C,第37卷,P70-75.
MLA	Wang Zhuo1,et al."He and H sequential implantation induced surface blistering and the exfoliation of Si covered with an oxide layer".中国物理C 第37卷(2013):P70-75.

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