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	Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits
	Wang, Kangping; Yang, Xu; Wang, Laili; Jain, Praveen
刊名	IEEE TRANSACTIONS ON POWER ELECTRONICS
	2018
卷号	33页码:1585-1596
关键词	sustained oscillation Gallium nitride (GaN) parasitic reverse conduction positive feed-back
ISSN号	0885-8993
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2922732
专题	西安交通大学
推荐引用方式 GB/T 7714	Wang, Kangping,Yang, Xu,Wang, Laili,et al. Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS,2018,33:1585-1596.
APA	Wang, Kangping,Yang, Xu,Wang, Laili,&Jain, Praveen.(2018).Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits.IEEE TRANSACTIONS ON POWER ELECTRONICS,33,1585-1596.
MLA	Wang, Kangping,et al."Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits".IEEE TRANSACTIONS ON POWER ELECTRONICS 33(2018):1585-1596.

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