High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks | |
Zhang, Hongchao; Meng, You; Song, Longfei; Luo, Linqu; Qin, Yuanbin; Han, Ning; Yang, Zaixing; Liu, Lei; Ho, Johnny C.; Wang, Fengyun | |
刊名 | NANO RESEARCH |
2018 | |
卷号 | 11页码:1227-1237 |
关键词 | In2O3 nanofiber doping threshold voltage transistor enhancement mode |
ISSN号 | 1998-0124 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2922670 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Zhang, Hongchao,Meng, You,Song, Longfei,et al. High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks[J]. NANO RESEARCH,2018,11:1227-1237. |
APA | Zhang, Hongchao.,Meng, You.,Song, Longfei.,Luo, Linqu.,Qin, Yuanbin.,...&Wang, Fengyun.(2018).High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks.NANO RESEARCH,11,1227-1237. |
MLA | Zhang, Hongchao,et al."High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks".NANO RESEARCH 11(2018):1227-1237. |
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