InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m

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	InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m
	Gu, Y ; Wang, K ; Li, YY ; Li, C ; Zhang, YG
刊名	CHINESE PHYSICS B
	2010-01-01
卷号	19 期号:7 页码:77304-77304
关键词	MOLECULAR-BEAM EPITAXY PERFORMANCE GASB MBE
ISSN号	1674-1056
通讯作者	Zhang, YG, Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2011-11-03
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/11117]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Gu, Y,Wang, K,Li, YY,et al. InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m[J]. CHINESE PHYSICS B,2010,19(7):77304-77304.
APA	Gu, Y,Wang, K,Li, YY,Li, C,&Zhang, YG.(2010).InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m.CHINESE PHYSICS B,19(7),77304-77304.
MLA	Gu, Y,et al."InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 mu m".CHINESE PHYSICS B 19.7(2010):77304-77304.