| Dynamic Performance of 4H-SiC Power MOSFETs and Si IGBTs over Wide Temperature Range | |
| Qi, Jinwei; Tian, Kai; Mao, Zhangsong; Yang, Song; Song, Wenjie; Yang, Mingchao; Zhang, Anping | |
| 2018 | |
| 关键词 | MOSFETs dynamic on-resistance silicon carbide (SiC) cryogenic temperature switching transient |
| 页码 | 2712-2716 |
| 会议录 | THIRTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2018)
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| URL标识 | 查看原文 |
| ISSN号 | 1048-2334 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2920115 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Qi, Jinwei,Tian, Kai,Mao, Zhangsong,et al. Dynamic Performance of 4H-SiC Power MOSFETs and Si IGBTs over Wide Temperature Range[C]. 见:. |
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