A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices | |
Wang, Kangping; Yang, Xu; Li, Hongchang; Wang, Laili; Jain, Praveen | |
刊名 | IEEE TRANSACTIONS ON POWER ELECTRONICS |
2018 | |
卷号 | 33页码:6199-6210 |
关键词 | Current measurement double pulse test circuit gallium nitride (GaN) high bandwidth parasitic inductance |
ISSN号 | 0885-8993 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2918700 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Wang, Kangping,Yang, Xu,Li, Hongchang,et al. A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS,2018,33:6199-6210. |
APA | Wang, Kangping,Yang, Xu,Li, Hongchang,Wang, Laili,&Jain, Praveen.(2018).A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices.IEEE TRANSACTIONS ON POWER ELECTRONICS,33,6199-6210. |
MLA | Wang, Kangping,et al."A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices".IEEE TRANSACTIONS ON POWER ELECTRONICS 33(2018):6199-6210. |
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