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	Enhancement of Anomalous Hall Effect via Interfacial Scattering in Metal‐Organic Semiconductor Fex1−x Granular Films Near the Metal‐Insulator Transition.
	Zheng, Lingcheng; He, Zhihao; Zhang, Rui; Qu, Jiangtao; Feng, Deqiang; He, Jie; Chen, Hansheng; Yun, Fan; Cheng, Yahui; Li, Zhiqing
刊名	Advanced Functional Materials
	2019
卷号	Vol.29 No.36
关键词	anomalous Hall effects fullerene granular films organic semiconductors
ISSN号	1616-301X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2904205
专题	天津大学
作者单位	1 Department of Electronics and Key Laboratory of Photo‐Electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300350, China 2 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin 300072, China 3 School of Physics, The University of Sydney, NSW, 2006, Australia 4 Physical Science and Engineering Division , King Abdullah University of Science and Technology , Thuwal 23955‐6900, Saudi Arabia
推荐引用方式 GB/T 7714	Zheng, Lingcheng,He, Zhihao,Zhang, Rui,et al. Enhancement of Anomalous Hall Effect via Interfacial Scattering in Metal‐Organic Semiconductor Fex1−x Granular Films Near the Metal‐Insulator Transition.[J]. Advanced Functional Materials,2019,Vol.29 No.36.
APA	Zheng, Lingcheng.,He, Zhihao.,Zhang, Rui.,Qu, Jiangtao.,Feng, Deqiang.,...&Zheng, Rongkun.(2019).Enhancement of Anomalous Hall Effect via Interfacial Scattering in Metal‐Organic Semiconductor Fex1−x Granular Films Near the Metal‐Insulator Transition..Advanced Functional Materials,Vol.29 No.36.
MLA	Zheng, Lingcheng,et al."Enhancement of Anomalous Hall Effect via Interfacial Scattering in Metal‐Organic Semiconductor Fex1−x Granular Films Near the Metal‐Insulator Transition.".Advanced Functional Materials Vol.29 No.36(2019).

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