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	Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions
	Han, X.a; Mi, W.a; Wang, X.b
刊名	JOURNAL OF MATERIALS CHEMISTRY C
	2019
卷号	Vol.7 No.14页码:4079-4088
ISSN号	2050-7526
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2899716
专题	天津大学
作者单位	1.aTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin, 300354, China 2.bSchool of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin, 300384, China
推荐引用方式 GB/T 7714	Han, X.a,Mi, W.a,Wang, X.b. Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions[J]. JOURNAL OF MATERIALS CHEMISTRY C,2019,Vol.7 No.14:4079-4088.
APA	Han, X.a,Mi, W.a,&Wang, X.b.(2019).Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions.JOURNAL OF MATERIALS CHEMISTRY C,Vol.7 No.14,4079-4088.
MLA	Han, X.a,et al."Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions".JOURNAL OF MATERIALS CHEMISTRY C Vol.7 No.14(2019):4079-4088.

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