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	The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells
	Liu, Y.a; Liu, W.a; Chen, M.-X.b; Shi, S.-H.a; He, Z.-C.a; Gong, J.-L.b; Wang, T.b; Zhou, Z.-Q.a; Liu, F.-F.a; Sun, Y.a
刊名	Optoelectronics Letters
	2018
卷号	Vol.14 No.5页码:363-366
ISSN号	1673-1905;1993-5013
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2896202
专题	天津大学
作者单位	1.aTianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin, 300071, China 2.bKey Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering , School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China 3.cDavidson School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, United States
推荐引用方式 GB/T 7714	Liu, Y.a,Liu, W.a,Chen, M.-X.b,et al. The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells[J]. Optoelectronics Letters,2018,Vol.14 No.5:363-366.
APA	Liu, Y.a.,Liu, W.a.,Chen, M.-X.b.,Shi, S.-H.a.,He, Z.-C.a.,...&Xu, S.c.(2018).The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells.Optoelectronics Letters,Vol.14 No.5,363-366.
MLA	Liu, Y.a,et al."The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells".Optoelectronics Letters Vol.14 No.5(2018):363-366.

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