一种半导体器件的制造方法 | |
王桂磊; 李俊峰; 刘金彪; 赵超 | |
2018-10-30 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US10115804 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | A method for manufacturing a semiconductor device, comprising: forming a gate trench on a substrate; forming a gate dielectric layer and a metal gate layer thereon in the gate trench; forming a first tungsten (W) layer on a surface of the metal gate layer, and forming a tungsten nitride (WN) blocking layer by injecting nitrogen (N) ions; and filling with W through an atomic layer deposition (ALD) process. The blocking layer prevents ions in the precursors from aggregating on an interface and penetrating into the metal gate layer and the gate dielectric layer. At the same time, adhesion of W is enhanced, a process window of W during planarization is increased, reliability of the device is improved and the gate resistance is further reduced. |
公开日期 | 2015-11-12 |
申请日期 | 2015-04-28 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.107/handle/172511/18900] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 王桂磊,李俊峰,刘金彪,等. 一种半导体器件的制造方法. US10115804. 2018-10-30. |
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