Effects of Annealing Ambient on Interface Charge and Dipole in GeOx/Al2O3 Gate Stacks of Ge Based MOSCAP

	Effects of Annealing Ambient on Interface Charge and Dipole in GeOx/Al2O3 Gate Stacks of Ge Based MOSCAP
	Wang XL(王晓磊); Xiang JJ(项金娟); Zhao C(赵超); Wang WW(王文武); Ye TC(叶甜春); Zhou LX(周丽星)
	2017-11-20
文献子类	会议论文
内容类型	会议论文
源URL	[http://159.226.55.106/handle/172511/18274]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Wang XL,Xiang JJ,Zhao C,et al. Effects of Annealing Ambient on Interface Charge and Dipole in GeOx/Al2O3 Gate Stacks of Ge Based MOSCAP[C]. 见:.