半导体器件及其制造方法 | |
秦长亮; 殷华湘; 马小龙; 徐秋霞; 陈大鹏 | |
2017-01-17 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US9548387 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein; a plurality of channel regions located in the fins below the gate stack structures; characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts. |
公开日期 | 2014-01-30 |
申请日期 | 2012-08-27 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/18217] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 秦长亮,殷华湘,马小龙,等. 半导体器件及其制造方法. US9548387. 2017-01-17. |
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