Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET

	Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET
	Wang SK(王盛凯); Han K(韩楷); Wang WW(王文武); Ye TC(叶甜春); Zhao C(赵超); Luo J(罗军); Eddy simoen; Xiang JJ(项金娟); Wang XL(王晓磊); Henry H.Radamson
刊名	IEEE Transactrions on Elelctron Diveces
	2017-04-12
文献子类	期刊论文
语种	英语
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18120]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Wang SK,Han K,Wang WW,et al. Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET[J]. IEEE Transactrions on Elelctron Diveces,2017.
APA	Wang SK.,Han K.,Wang WW.,Ye TC.,Zhao C.,...&Henry H.Radamson.(2017).Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET.IEEE Transactrions on Elelctron Diveces.
MLA	Wang SK,et al."Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFET".IEEE Transactrions on Elelctron Diveces (2017).