Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

	Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition
	Wang XL(王晓磊); Xiang JJ(项金娟); Yang H(杨红); Ma XL(马雪丽); Zhu HL(朱慧珑); Zhao C(赵超); Yin HX(殷华湘); Zhang JQ(张建齐); Wang WW(王文武)
刊名	Chin. Phys. B
	2017-01-10
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18092]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Wang XL,Xiang JJ,Yang H,et al. Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition[J]. Chin. Phys. B,2017.
APA	Wang XL.,Xiang JJ.,Yang H.,Ma XL.,Zhu HL.,...&Wang WW.(2017).Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition.Chin. Phys. B.
MLA	Wang XL,et al."Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition".Chin. Phys. B (2017).