半导体器件及其制造方法 | |
钟汇才; 赵超; 梁擎擎 | |
2016-04-05 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US9306016 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | The present invention provides a method for manufacturing a semiconductor device, which comprises: providing an SOI substrate, which comprises a base layer, an insulating layer located on the base layer and a active layer located on the insulating layer; forming a gate stack on the SOI substrate; etching the active layer, the insulating layer and a part of the base layer of the SOI substrate with the gate stack as a mask, so as to form trenches on both sides of the gate stack; forming a crystal dielectric layer within the trenches, wherein the upper surface of the crystal dielectric layer is lower than the upper surface of the insulating layer and not lower than the lower surface of the insulating layer; and forming source/drain regions on the crystal dielectric layer. The present invention further provides a semiconductor device. The present invention is capable of eliminating pathway for leakage current between source/drain regions and SOI substrate at the meantime of reducing contact resistance at source/drain regions. |
公开日期 | 2014-02-27 |
申请日期 | 2012-09-17 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://159.226.55.106/handle/172511/16628] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 钟汇才,赵超,梁擎擎. 半导体器件及其制造方法. US9306016. 2016-04-05. |
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