Technology node scaling to the 7-nm node, self-aligned quadruple patterning plus cutting/blocking is widely adopted as a lithography solution for critical line and space layers. The cutting/blocking process can be done by 193i or EUV lithography. Due to resolution requirements in both X∕Y directions, 193i requires two or three exposures to accomplish the cutting/blocking process, and the overlay among the exposures must be controlled very tightly.