半导体结构及其制作方法 | |
骆志炯; 梁擎擎; 朱慧珑; 尹海洲 | |
2014-07-01 | |
著作权人 | 中国科学院微电子研究所 |
专利号 | US8766371 |
国家 | 美国 |
文献子类 | 发明专利 |
英文摘要 | There is provided a semiconductor structure and a method for manufacturing the same. The semiconductor structure according to the present invention comprises: a semiconductor substrate; a channel region formed on the semiconductor substrate; a gate stack formed on the channel region; and source/drain regions formed on both sides of the channel region and embedded in the semiconductor substrate. The gate stack comprises: a gate dielectric layer formed on the channel region; and a conductive layer positioned on the gate dielectric layer. For an nMOSFET, the conductive layer has a compressive stress to apply a tensile stress to the channel region; and for a pMOSFET, the conductive layer has a tensile stress to apply a compressive stress to the channel region. |
公开日期 | 2011-12-29 |
申请日期 | 2011-02-25 |
语种 | 中文 |
内容类型 | 专利 |
源URL | [http://10.10.10.126/handle/311049/13278] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | 骆志炯,梁擎擎,朱慧珑,等. 半导体结构及其制作方法. US8766371. 2014-07-01. |
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