Due to resolution limitation of 1.35NA 193nm immersion lithography, double-exposure and double-patterning (DP) are widely used in 20nm logic process. We propose to replace these DP layers with multi e-beam lithography, i.e. combining two photo masks into one e-beam exposure layer. Our analysis suggests that current multi e-beam tool has the resolution capability to expose these combined layers. The major concern is the mix-and-match overlay, which should be addressed by further improvement