Doping profile optimisation in bulk FinFET channeland source/drain extension regions for low off-state leakage

	Doping profile optimisation in bulk FinFET channeland source/drain extension regions for low off-state leakage
	Ye TC(叶甜春); Zhang KK(张珂珂); Liu YF(刘云飞); Zhu HL(朱慧珑); Zhao C(赵超); Yin HZ(尹海洲)
刊名	Int. J. Nanotechnol
	2014-11-01
公开日期	2015-05-06
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/12758]
专题	微电子研究所_集成电路先导工艺研发中心
通讯作者	Yin HZ(尹海洲)
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Ye TC,Zhang KK,Liu YF,et al. Doping profile optimisation in bulk FinFET channeland source/drain extension regions for low off-state leakage[J]. Int. J. Nanotechnol,2014.
APA	Ye TC,Zhang KK,Liu YF,Zhu HL,Zhao C,&Yin HZ.(2014).Doping profile optimisation in bulk FinFET channeland source/drain extension regions for low off-state leakage.Int. J. Nanotechnol.
MLA	Ye TC,et al."Doping profile optimisation in bulk FinFET channeland source/drain extension regions for low off-state leakage".Int. J. Nanotechnol (2014).