The effects of process condition of Top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks

	The effects of process condition of Top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks
	Chen DP(陈大鹏); Ma XL(马雪丽); Yang H(杨红); Wang WW(王文武); Yin HX(殷华湘); Zhu HL(朱慧珑); Zhao C(赵超); Ye TC(叶甜春)
刊名	Journal of Semiconductors
	2014-10-15
公开日期	2015-05-06
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/12742]
专题	微电子研究所_集成电路先导工艺研发中心
通讯作者	Ma XL(马雪丽)
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Chen DP,Ma XL,Yang H,et al. The effects of process condition of Top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks[J]. Journal of Semiconductors,2014.
APA	Chen DP.,Ma XL.,Yang H.,Wang WW.,Yin HX.,...&Ye TC.(2014).The effects of process condition of Top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks.Journal of Semiconductors.
MLA	Chen DP,et al."The effects of process condition of Top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks".Journal of Semiconductors (2014).