An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness | |
Chen DP(陈大鹏); Ma XL(马雪丽); Yang H(杨红); Wang WW(王文武); Yin HX(殷华湘); Zhu HL(朱慧珑); Zhao C(赵超); Ye TC(叶甜春) | |
刊名 | Journal of Semiconductors |
2014-09-01 | |
公开日期 | 2015-05-06 |
内容类型 | 期刊论文 |
源URL | [http://10.10.10.126/handle/311049/12740] |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
通讯作者 | Ma XL(马雪丽) |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Chen DP,Ma XL,Yang H,et al. An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness[J]. Journal of Semiconductors,2014. |
APA | Chen DP.,Ma XL.,Yang H.,Wang WW.,Yin HX.,...&Ye TC.(2014).An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness.Journal of Semiconductors. |
MLA | Chen DP,et al."An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness".Journal of Semiconductors (2014). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论