Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition

	Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition
	Yijian Liang; Jing Li; Xiaoming Ge; ShiKe Hu; Guanghui Yu; Peng SA(彭松昂); Jin Z(金智); Liu XY(刘新宇); ZhiYing Chen; Yanhui Zhang
刊名	RSC Advances
	2018-05-22
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/19003]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Yijian Liang,Jing Li,Xiaoming Ge,et al. Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition[J]. RSC Advances,2018.
APA	Yijian Liang.,Jing Li.,Xiaoming Ge.,ShiKe Hu.,Guanghui Yu.,...&YanPing Sui.(2018).Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition.RSC Advances.
MLA	Yijian Liang,et al."Growth promotion of vertical graphene on SiO2/Si by Ar plasma process in plasma-enhanced chemical vapor deposition".RSC Advances (2018).