Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-based HEMTs with Good DC and RF Performances

	Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-based HEMTs with Good DC and RF Performances
	Chen C(陈晨); Ding P(丁芃); Niu JB(牛洁斌); Yang F(杨枫); Ding WC(丁武昌); Su YB(苏永波); Wang DH(王大海); Jin Z(金智)
刊名	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
	2017-11-09
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18005]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Chen C,Ding P,Niu JB,et al. Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-based HEMTs with Good DC and RF Performances[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2017.
APA	Chen C.,Ding P.,Niu JB.,Yang F.,Ding WC.,...&Jin Z.(2017).Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-based HEMTs with Good DC and RF Performances.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY.
MLA	Chen C,et al."Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-based HEMTs with Good DC and RF Performances".IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2017).