Comparison of Single-Step and Two-Step EBL T-gates Fabrication Techniques for InP-based HEMT

	Comparison of Single-Step and Two-Step EBL T-gates Fabrication Techniques for InP-based HEMT
	Wang HL(王海丽); Zhong YH(钟英辉); Zang HP(臧华平); Sun SX(孙淑香); Li KK(李凯凯); Li XJ(李晓建); Ding P(丁芃); Jin Z(金智)
刊名	Chinese Journal of Electronics
	2015-06-10
公开日期	2016-05-26
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/14995]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Wang HL,Zhong YH,Zang HP,et al. Comparison of Single-Step and Two-Step EBL T-gates Fabrication Techniques for InP-based HEMT[J]. Chinese Journal of Electronics,2015.
APA	Wang HL.,Zhong YH.,Zang HP.,Sun SX.,Li KK.,...&Jin Z.(2015).Comparison of Single-Step and Two-Step EBL T-gates Fabrication Techniques for InP-based HEMT.Chinese Journal of Electronics.
MLA	Wang HL,et al."Comparison of Single-Step and Two-Step EBL T-gates Fabrication Techniques for InP-based HEMT".Chinese Journal of Electronics (2015).