Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method

	Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method
	Zhang DS(张代生); Ye TC(叶甜春); Liu XY(刘新宇); Jin Z(金智); Ding WC(丁武昌); Chen C(陈晨); Jia R(贾锐)
刊名	Chemical Physics Letters
	2014-04-05
语种	英语
公开日期	2015-04-17
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/12574]
专题	微电子研究所_高频高压器件与集成研发中心
通讯作者	Jia R(贾锐)
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Zhang DS,Ye TC,Liu XY,et al. Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method[J]. Chemical Physics Letters,2014.
APA	Zhang DS.,Ye TC.,Liu XY.,Jin Z.,Ding WC.,...&Jia R.(2014).Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method.Chemical Physics Letters.
MLA	Zhang DS,et al."Reflectance and minority carrier lifetime of silicon nanoholes synthesized by chemical etching method".Chemical Physics Letters (2014).