| Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress | |
| Niu JB(牛洁斌) | |
| 刊名 | Nanoscale Research Letters
 |
| 2017-02-16 | |
| 文献子类 | 期刊论文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18183]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 推荐引用方式 GB/T 7714 | Niu JB. Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress[J]. Nanoscale Research Letters,2017. |
| APA | 牛洁斌.(2017).Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.Nanoscale Research Letters. |
| MLA | 牛洁斌."Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress".Nanoscale Research Letters (2017). |
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