Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics | |
He QM(何启鸣); Dong H(董航); Long SB(龙世兵)![]() ![]() ![]() ![]() | |
刊名 | APPLIED PHYSICS LETTERS
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2017-03-01 | |
文献子类 | 期刊论文 |
内容类型 | 期刊论文 |
源URL | [http://159.226.55.106/handle/172511/18170] ![]() |
专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | He QM,Dong H,Long SB,et al. Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics[J]. APPLIED PHYSICS LETTERS,2017. |
APA | He QM,Dong H,Long SB,Lv HB,Liu Q,&Liu M.(2017).Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics.APPLIED PHYSICS LETTERS. |
MLA | He QM,et al."Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics".APPLIED PHYSICS LETTERS (2017). |
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