Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
He QM(何启鸣); Dong H(董航); Long SB(龙世兵); Lv HB(吕杭炳); Liu Q(刘琦); Liu M(刘明)
刊名APPLIED PHYSICS LETTERS
2017-03-01
文献子类期刊论文
内容类型期刊论文
源URL[http://159.226.55.106/handle/172511/18170]  
专题微电子研究所_微电子器件与集成技术重点实验室
作者单位中国科学院微电子研究所
推荐引用方式
GB/T 7714
He QM,Dong H,Long SB,et al. Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics[J]. APPLIED PHYSICS LETTERS,2017.
APA He QM,Dong H,Long SB,Lv HB,Liu Q,&Liu M.(2017).Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics.APPLIED PHYSICS LETTERS.
MLA He QM,et al."Schottky barrier diode based on beta-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics".APPLIED PHYSICS LETTERS (2017).
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