Set statistics in conductive bridge random access memory device

	Set statistics in conductive bridge random access memory device
	Li Y(李阳); Liu Q(刘琦); Lv HB(吕杭炳); Xu XX(许晓欣); Liu M(刘明); Wang GM(王国明); Long SB(龙世兵); Zhang MY(张美芸)
刊名	Applied Physics Letters
	2014-11-10
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/12498]
专题	微电子研究所_微电子器件与集成技术重点实验室
通讯作者	Long SB(龙世兵)
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Li Y,Liu Q,Lv HB,et al. Set statistics in conductive bridge random access memory device[J]. Applied Physics Letters,2014.
APA	Li Y.,Liu Q.,Lv HB.,Xu XX.,Liu M.,...&Zhang MY.(2014).Set statistics in conductive bridge random access memory device.Applied Physics Letters.
MLA	Li Y,et al."Set statistics in conductive bridge random access memory device".Applied Physics Letters (2014).