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	Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation
	Gao JT(高见头); Li DL(李多力); Li BH(李彬鸿); Li B(李博); Zheng ZS(郑中山); Zhu HP(朱慧平); Han ZS(韩郑生); Luo JJ(罗家俊); Liang CP(梁春平); Cui Y(崔岩)
刊名	Semiconductor Science and Technology
	2018-10-11
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18910]
专题	微电子研究所_硅器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Gao JT,Li DL,Li BH,et al. Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation[J]. Semiconductor Science and Technology,2018.
APA	Gao JT.,Li DL.,Li BH.,Li B.,Zheng ZS.,...&Cui Y.(2018).Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation.Semiconductor Science and Technology.
MLA	Gao JT,et al."Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation".Semiconductor Science and Technology (2018).

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