Multi-Angle Analysis of 30 MeV Silicon Ion Beam Irradiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

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	Multi-Angle Analysis of 30 MeV Silicon Ion Beam Irradiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes
	Han ZS(韩郑生); Zheng ZS(郑中山); Li BH(李彬鸿); Cui Y(崔岩); Li B(李博); Wang L(王磊); Luo JJ(罗家俊)
刊名	IEEE Transactions on Nuclear Science
	2018-10-01
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/18907]
专题	微电子研究所_硅器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Han ZS,Zheng ZS,Li BH,et al. Multi-Angle Analysis of 30 MeV Silicon Ion Beam Irradiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes[J]. IEEE Transactions on Nuclear Science,2018.
APA	Han ZS.,Zheng ZS.,Li BH.,Cui Y.,Li B.,...&Luo JJ.(2018).Multi-Angle Analysis of 30 MeV Silicon Ion Beam Irradiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes.IEEE Transactions on Nuclear Science.
MLA	Han ZS,et al."Multi-Angle Analysis of 30 MeV Silicon Ion Beam Irradiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes".IEEE Transactions on Nuclear Science (2018).