The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation.

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	The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation.
	Liu ZL(刘忠立); Han ZS(韩郑生); Luo JJ(罗家俊); Zheng ZS(郑中山)
刊名	SCIENCE CHINA Materials
	2016-08-22
英文摘要	Nitrogen (N) and fluorine (F) ions were sequentiallyimplanted into the buried oxide (BOX) to improve the total dose radiation hardness of the BOX layer in silicon-oninsulator (SOI) materials. The radiation response of the BOX layers modified by the ion implantation was characterized by flat-band voltage shifts and trapped charge changes in the BOX, based on the capacitance-voltage (C-V) measurements on the polysilicon-BOX-semiconductor (PBS) structures fabricated on the SOI materials, ···
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/16154]
专题	微电子研究所_硅器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Liu ZL,Han ZS,Luo JJ,et al. The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation.[J]. SCIENCE CHINA Materials,2016.
APA	Liu ZL,Han ZS,Luo JJ,&Zheng ZS.(2016).The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation..SCIENCE CHINA Materials.
MLA	Liu ZL,et al."The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation.".SCIENCE CHINA Materials (2016).