Lattice disorder produced in GaN by He-ion implantation

doi:10.1016/j.nimb.2016.12.039

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Lattice disorder produced in GaN by He-ion implantation
	Luo, Peng 1; Sheng, Yanbin1 ; Zhang, Hongpeng1 ; Zhang, Li 2; Fang, Xuesong 1,4; Zhao, Sixiang 1; Jin, Jin 1; Huang, Yuxuan 1; Liu, Chao 1; Tai, Pengfei 1
	2017-09
关键词	He-ion implantation GaN Microstructure Lattice disorder Lattice strain
卷号	406
DOI	10.1016/j.nimb.2016.12.039
页码	543-547
英文摘要	The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 x 10(16), 5 x 10(16) and 1 x 10(17) cm(-2) at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency "red shift" occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed. (C) 2016 Elsevier B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
资助项目	National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[91426301] ; National Natural Science Foundation of China[11305081]
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000407659500028
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/58563]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Li, Bingsheng
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Gansu, Peoples R China 3.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 4.China Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Luo, Peng,Sheng, Yanbin,Zhang, Hongpeng,et al. Lattice disorder produced in GaN by He-ion implantation[C]. 见:.