Photoluminescence character of Xe ion irradiated sapphire

doi:10.1016/j.nimb.2008.03.210

	Photoluminescence character of Xe ion irradiated sapphire
	Jie, Gou 1; Yan-bin, Sheng1 ; Er-qing, Xie 2; Chong-hong, Zhang1 ; Zhi-guang, Wang1 ; Li-hong, Zhou 1; Yi-Zhong, Ma 1; Cun-feng, Yao1 ; Hang, Zang 1; Yin, Song 1,2
	2008-06
关键词	ion implantation ion irradiation Al2O3 PL spectra
卷号	266
期号	12-13
DOI	10.1016/j.nimb.2008.03.210
页码	2998-3001
英文摘要	In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3. (C) 2008 Elsevier B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000257721300074
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/58234]
专题	近代物理研究所_材料研究中心近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Yin, Song
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Jie, Gou,Yan-bin, Sheng,Er-qing, Xie,et al. Photoluminescence character of Xe ion irradiated sapphire[C]. 见:.