Lattice disorder produced in GaN by He-ion implantation

doi:10.1016/j.nimb.2016.12.039

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Lattice disorder produced in GaN by He-ion implantation
	Zhang, Li 2; Fang, Xuesong 1,4; Zhao, Sixiang 1; Jin, Jin 1; Huang, Yuxuan 1; Liu, Chao 1; Tai, Pengfei 1; Wang, Dong 1,4; He, Wenhao 1,4; Han, Yi 1,4
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2017-09-01
卷号	406 页码:543-547
关键词	He-ion implantation GaN Microstructure Lattice disorder Lattice strain
ISSN号	0168-583X
DOI	10.1016/j.nimb.2016.12.039
英文摘要	The lattice disorders induced by He-ion implantation in GaN epitaxial films to fluences of 2 x 10(16), 5 x 10(16) and 1 x 10(17) cm(-2) at room temperature (RT) have been investigated by a combination of Raman spectroscopy, high-resolution X-ray diffraction (HRXRD), nano-indentation, and transmission electron microscopy (TEM). The experimental results present that Raman intensity decreases with increasing fluence. Raman frequency "red shift" occurs after He-ion implantation. Strain increases with increasing fluence. The hardness of the highly damaged layer increases monotonically with increasing fluence. Microstructural results demonstrate that the width of the damage band and the number density of observed dislocation loops increases with increasing fluence. High-resolution TEM images exhibit that He-ion implantation lead to the formation of planar defects and most of the lattice defects are of interstitial-type basal loops. The relationships of Raman intensity, lattice strain, swelling and hardness with He-implantation-induced lattice disorders are discussed. (C) 2016 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[91426301] ; National Natural Science Foundation of China[11305081]
WOS关键词	MECHANICAL-PROPERTIES ; MICROHARDNESS ; TECHNOLOGY ; RAMAN ; AR
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000407659500028
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/45547]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Li, Bingsheng
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Lanzhou Univ Technol, Sch Sci, Dept Phys, Lanzhou 730050, Gansu, Peoples R China 3.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 4.China Grad Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Li,Fang, Xuesong,Zhao, Sixiang,et al. Lattice disorder produced in GaN by He-ion implantation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,406:543-547.
APA	Zhang, Li.,Fang, Xuesong.,Zhao, Sixiang.,Jin, Jin.,Huang, Yuxuan.,...&Zhang, Hongpeng.(2017).Lattice disorder produced in GaN by He-ion implantation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,406,543-547.
MLA	Zhang, Li,et al."Lattice disorder produced in GaN by He-ion implantation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 406(2017):543-547.