Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C

doi:10.1016/j.jnucmat.2018.03.038

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 先进核能材料研究室（ADS）

	Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C
	Li, Bingsheng2 ; Han, Wentuo 1
刊名	JOURNAL OF NUCLEAR MATERIALS
	2018-06-01
卷号	504 页码:161-165
关键词	Silicon carbide He irradiation Microstructure Grain boundaries Stacking faults
ISSN号	0022-3115
DOI	10.1016/j.jnucmat.2018.03.038
英文摘要	In order to investigate the effect of the high-temperature irradiation on microstructural evolutions of the polycrystalline SiC, an ion irradiation at 1000 degrees C with the 500 keV He2+ was imposed to the alpha-SiC. The platelets, He bubbles, dislocation loops, and particularly, their interaction with the stacking fault and grain boundaries were focused on and characterized by the cross-sectional transmission electron microscopy (XTEM). The platelets expectably exhibit a dominant plane of (0001), while planes of (01-10) and (10-16) are also found. Inside the platelet, the over-pressurized bubbles exist and remarkably cause a strong-strain zone surrounding the platelet. The disparate roles between the grain boundaries and stacking faults in interacting with the bubbles and loops are found. The results are compared with the previous weighty findings and discussed. (C) 2018 Elsevier B.V. All rights reserved.
资助项目	National Nature Science Foundation of China[11475229]
WOS关键词	HELIUM IMPLANTATION ; EVOLUTION ; COMPOSITES
WOS研究方向	Materials Science ; Nuclear Science & Technology
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000430050900019
资助机构	National Nature Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/24431]
专题	近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Li, Bingsheng
作者单位	1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Li, Bingsheng,Han, Wentuo. Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C[J]. JOURNAL OF NUCLEAR MATERIALS,2018,504:161-165.
APA	Li, Bingsheng,&Han, Wentuo.(2018).Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C.JOURNAL OF NUCLEAR MATERIALS,504,161-165.
MLA	Li, Bingsheng,et al."Microstructural defects in He-irradiated polycrystalline alpha-SiC at 1000 degrees C".JOURNAL OF NUCLEAR MATERIALS 504(2018):161-165.