Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer

doi:10.1016/j.nimb.2017.04.056

	Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer
	Li, Jj.1,2; Zhang, C. H.2; Zhang, L. Q.1,2; Song, Y.2 ; Yan, T. X.1,2; Ding, Z. N.2; Liu, H. P.2; Li, J. Y.2; Ma, Y. Z.2; Yang, Y. T.2
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2017-09-01
卷号	406 页码:571-577
关键词	GaN Highly-charged bismuth ion irradiation AFM XPS Raman scattering spectrum PL
ISSN号	0168-583X
DOI	10.1016/j.nimb.2017.04.056
英文摘要	The microstructure and optoelectric properties of GaN epilayer irradiated by highly-charged Bi-209(33+) to different fluences are investigated by means of atomic force microscopy, X-ray photoelectron spectroscopy, Raman scattering spectroscopy and photoluminescence spectroscopy. After Bi33+ irradiation, AFM observation shows the irradiated GaN surface is a swelling and swelling rate nonlinearly increases with increasing ions fluence. XPS analysis reveals the relative content of Ga-N bond reduces and Ga-O, Ga-Ga bonds have been produced as the fluence increases. Raman scattering spectra display the thickness of surface depletion layer increases, free carrier concentration and its mobility decrease generally with an increase in ions fluence. Furthermore, the length of Ga-N bond shortens and lattices experience compressive stress with increasing ions fluence are observed from Raman spectra. Room temperature PL spectra reflect the intensity of yellow luminescence (YL) emission increases and its peak has a blueshift after 1.061 x 10(12) Bi33+/cm(2) irradiation. Moreover, as the temperature rises, the thermal quenching of YL occurs and its peak position first exhibits a blueshift and then a redshift. Results may be served as a useful reference for HCI to be used in semiconductor fields. (C) 2017 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[11675231] ; National Natural Science Foundation of China[91426304] ; National Natural Science Foundation of China[11105191] ; National Magnetic Confinement Fusion Program[2011GB108003] ; National Basic Research Program of China[2010CB832904]
WOS关键词	SURFACE NANOSTRUCTURES ; SLOW ; IONS ; IMPACT ; CREATION
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000407659500033
资助机构	National Natural Science Foundation of China ; National Magnetic Confinement Fusion Program ; National Basic Research Program of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/24413]
专题	近代物理研究所_能源材料研究组近代物理研究所_材料研究中心
通讯作者	Zhang, C. H.
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, 509 Nan Chang Rd, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Li, Jj.,Zhang, C. H.,Zhang, L. Q.,et al. Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,406:571-577.
APA	Li, Jj..,Zhang, C. H..,Zhang, L. Q..,Song, Y..,Yan, T. X..,...&Xu, C. L..(2017).Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,406,571-577.
MLA	Li, Jj.,et al."Influence of highly-charged Bi-209(33+) irradiation on structure and optoelectric characteristics of GaN epilayer".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 406(2017):571-577.