Formation of monolayer graphene on a basal HOPG surface irradiated with Xe ions

doi:10.1016/j.nimb.2012.12.075

	Formation of monolayer graphene on a basal HOPG surface irradiated with Xe ions
	Zhao, Y. T.1; Cheng, R.1 ; Lu, X.2; Peng, H. B.2; Wang, T. S.2; Yang, K. J.2; Yuan, W.2; Wang, Q.2
	2013-07-15
关键词	Highly charged ion Graphene HOPG Raman spectroscopy
卷号	307
DOI	10.1016/j.nimb.2012.12.075
页码	127-130
英文摘要	Highly charged Xeq+ (q = 5, 21, 26) ions with kinetic energy of 450 keV were extracted from electron cyclotron resonance ion source. Highly oriented pyrolytic graphite (HOPG) basal surfaces were impacted by the Xeq+ ions. The samples were analyzed with Raman spectroscopy. There appeared a tiny peak in Raman spectrum at position of 2643 cm(-1) for the impact of Xe5+ ion, which suggested the monolayer graphene was formed on the HOPG surface. The intensity of the peak depended on the charge state of incident ions. (C) 2013 Elsevier B.V. All rights reserved.
会议录	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者	ELSEVIER SCIENCE BV
会议录出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种	英语
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号	WOS:000321722200030
内容类型	会议论文
源URL	[http://119.78.100.186/handle/113462/58316]
专题	近代物理研究所_实验物理中心
通讯作者	Peng, H. B.
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Y. T.,Cheng, R.,Lu, X.,et al. Formation of monolayer graphene on a basal HOPG surface irradiated with Xe ions[C]. 见:.