Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits

doi:10.1109/TNS.2015.2423672

	Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits
	Shao, Cuiping 2; Li, Huiyun 2; Xu, Guoqing 2; Guo, Jinlong1 ; Dai, Liang 2; Du, Guanghua1
刊名	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
	2015-06-01
卷号	62 页码:1341-1348
关键词	Cryptographic integrated circuits fault injection heavy ion microbeam single-event transient (SET)
ISSN号	0018-9499
DOI	10.1109/TNS.2015.2423672
英文摘要	Transistors hit by heavy ions may conduct transiently, thereby introducing transient logic errors. Attackers can exploit these abnormal behaviors and extract sensitive information from the electronic devices. This paper demonstrates an ion irradiation fault injection attack experiment into a cryptographic field-programmable gate-array (FPGA) circuit. The experiment proved that the commercial FPGA chip is vulnerable to low-linear energy transfer carbon irradiation, and the attack can cause the leakage of secret key bits. A statistical model is established to estimate the possibility of an effective fault injection attack on cryptographic integrated circuits. The model incorporates the effects from temporal, spatial, and logical probability of an effective attack on the cryptographic circuits. The rate of successful attack calculated from the model conforms well to the experimental results. This quantitative success rate model can help evaluate security risk for designers as well as for the third-party assessment organizations.
资助项目	National S&T Major Project of China[2014ZX01032401-001] ; Shenzhen ST Project[JCYJ20140417113430591] ; Shenzhen ST Project[GJHZ20140417113430584] ; Guangdong ST Funding[2013B050800003] ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; CAS[O713040YZ0]
WOS关键词	SINGLE-EVENT TRANSIENTS ; KEY CRYPTOSYSTEMS ; ATTACKS ; PROPAGATION ; LOGIC
WOS研究方向	Engineering ; Nuclear Science & Technology
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000356459900019
资助机构	National S&T Major Project of China ; Shenzhen ST Project ; Guangdong ST Funding ; Youth Innovation Promotion Association, Chinese Academy of Sciences ; CAS
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/39970]
专题	近代物理研究所_实验物理中心
通讯作者	Li, Huiyun
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Univ Hong Kong, Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Shao, Cuiping,Li, Huiyun,Xu, Guoqing,et al. Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2015,62:1341-1348.
APA	Shao, Cuiping,Li, Huiyun,Xu, Guoqing,Guo, Jinlong,Dai, Liang,&Du, Guanghua.(2015).Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,62,1341-1348.
MLA	Shao, Cuiping,et al."Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 62(2015):1341-1348.