Paramagnetic defect production in silicon after 112MeV Ar ion irradiation

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	Paramagnetic defect production in silicon after 112MeV Ar ion irradiation
	Li, BQ; Meng, QH; Wang, YS; Li, CL; Jin, YF; Wang, ZG; Sun, YM; Cheng, S; Zhu, ZY; Hou, MD
刊名	HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
	1998-09-01
卷号	22 页码:858-863
关键词	Ar ion irradiation defect electron paramagnetic resonance annealing
ISSN号	0254-3052
英文摘要	Electron Paramagnetic Resonance has been used to investigate the defect produced in silicon by irradiation with 112MeV Ar ions below 50K. Several kinds of defects, which include the neutral 4-vacancy (Si-P3 center), amorphous center and etc. are observed in the as-irradiated samples. The Si-P3 center is distributed in the regions where electronic stopping power dominates and is annealed out at about 200 degrees C. Accompanied by the disappearance of the Si-P3 center, the complex vacancy clusters, such as Si-P1 center and Si-A11 center begin to grow. The recrystallization of the isolated amorphous region occurs at 350 degrees C. The radius of the produced amorphous region for low fluence Ar ion irradiated sample is evaluated and it is distributed in the range from 16 to 20 Angstrom. The results are qualitatively discussed.
WOS研究方向	Physics
语种	英语
出版者	SCIENCE PRESS
WOS记录号	WOS:000076441400013
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/35342]
专题	近代物理研究所_先进核能材料研究室（ADS）近代物理研究所_实验物理中心
通讯作者	Liu, CL
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Li, BQ,Meng, QH,Wang, YS,et al. Paramagnetic defect production in silicon after 112MeV Ar ion irradiation[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,1998,22:858-863.
APA	Li, BQ.,Meng, QH.,Wang, YS.,Li, CL.,Jin, YF.,...&Liu, CL.(1998).Paramagnetic defect production in silicon after 112MeV Ar ion irradiation.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,22,858-863.
MLA	Li, BQ,et al."Paramagnetic defect production in silicon after 112MeV Ar ion irradiation".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 22(1998):858-863.