The effects of the annealing time on helium implantation in Si

doi:10.1016/j.nimb.2010.08.009

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	The effects of the annealing time on helium implantation in Si
	Zhang, L. Q.; Zhou, L. H.; Yang, Y. T.; Zhang, H. H.; Zhang, C. H.; Li, B. S.; Zhang, Y.
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2010-11-01
卷号	268 期号:21 页码:3390-3394
关键词	Surface morphology Atomic force microscopy Transmission electron microscopy Implantation
ISSN号	0168-583X
DOI	10.1016/j.nimb.2010.08.009
英文摘要	The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. (C) 2010 Elsevier B.V. All rights reserved.
资助项目	National Natural Science Foundation of China[10575124] ; National Natural Science Foundation of China[10979063]
WOS关键词	TRANSIENT ENHANCED DIFFUSION ; SINGLE-CRYSTAL SILICON ; BUBBLE PRECURSORS ; HE IMPLANTATION ; HYDROGEN ; VOIDS ; DEFECTS ; DAMAGE ; BORON
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000283393600005
资助机构	National Natural Science Foundation of China
公开日期	2011-04-20
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/7759]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）
通讯作者	Li, B. S.
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Zhang, L. Q.,Zhou, L. H.,Yang, Y. T.,et al. The effects of the annealing time on helium implantation in Si[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2010,268(21):3390-3394.
APA	Zhang, L. Q..,Zhou, L. H..,Yang, Y. T..,Zhang, H. H..,Zhang, C. H..,...&Zhang, Y..(2010).The effects of the annealing time on helium implantation in Si.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,268(21),3390-3394.
MLA	Zhang, L. Q.,et al."The effects of the annealing time on helium implantation in Si".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 268.21(2010):3390-3394.