Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

CORC > 近代物理研究所 > 中国科学院近代物理研究所 > 近代物理研究所知识存储（2010之前）

	Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator
	Li Bing-Sheng1 ; Zhang Chong-Hong1 ; Hao Xiao-Peng 2; Wang Dan-Ni 2; Zhou Li-Hong 1; Zhang Hong-Hua 1; Yang Yi-Tao1 ; Zhang Li-Qing1
刊名	CHINESE PHYSICS B
	2008-10-01
卷号	17 期号:10 页码:3836-3840
关键词	positron annihilation nanocavity oxygen diffusion silicon dioxide
ISSN号	1674-1056
英文摘要	In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 x 10(16) cm(-2) and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.
WOS关键词	POSITRON-ANNIHILATION SPECTROSCOPY ; ION-IMPLANTATION ; SIMOX WAFERS ; SI ; DEFECTS ; TEMPERATURE ; IRRADIATION ; LAYER ; FILM
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000260263800049
公开日期	2010-10-29
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/5707]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）近代物理研究所_材料研究中心近代物理研究所_先进核能材料研究室（ADS）
通讯作者	Li Bing-Sheng
作者单位	1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst High Energy Phys, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Li Bing-Sheng,Zhang Chong-Hong,Hao Xiao-Peng,et al. Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator[J]. CHINESE PHYSICS B,2008,17(10):3836-3840.
APA	Li Bing-Sheng.,Zhang Chong-Hong.,Hao Xiao-Peng.,Wang Dan-Ni.,Zhou Li-Hong.,...&Zhang Li-Qing.(2008).Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator.CHINESE PHYSICS B,17(10),3836-3840.
MLA	Li Bing-Sheng,et al."Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator".CHINESE PHYSICS B 17.10(2008):3836-3840.